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Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUV42 DESCRIPTION With TO-3 package Fast switching times Low collector saturation voltage APPLICATIONS For switching applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings (Tc=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg Collector-base voltage PARAMETER CONDITIONS Open emitter Open base Collector-emitter voltage HAG INC Collector current Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature Emitter-base voltage SEM NE Open collector OND IC TOR UC VALUE 350 250 7 12 18 2.5 4 UNIT V V V A A A A W ae ae TCU 25ae 120 200 -65~200 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case VALUE 1.46 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. BUV42 SYMBOL MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ; L=25mH 250 V V(BR)EBO Emitter-base breakdown voltage IE=50mA; IC=0 IC=2A; IB=0.13A Tj=100ae IC=4A; IB=0.4A Tj=100ae IC=6A; IB=0.75A Tj=100ae IC=4A; IB=0.4A Tj=100ae IC=6A; IB=0.75A Tj=100ae VCE=VCEV; VBE=-1.5V TC=100ae VEB=5V; IC=0 7 0.8 0.9 0.9 1.2 1.2 1.5 1.3 V VCEsat-1 Collector-emitter saturation voltage V VCEsat-2 Collector-emitter saturation voltage V VCEsat-3 Collector-emitter saturation voltage V VBEsat-1 Base-emitter saturation voltage V VBEsat-2 Base-emitter saturation voltage ICEV Collector cut-off current 1.5 V IEBO Emitter cut-off current Switching times resistive load tr Rise time HAG INC SEM NE OND IC TOR UC 0.5 2.0 1 0.3 0.4 mA mA |I s ts Storage time IC=6A ;IB1=0.75A RB2=3.3| ; VCC=200V VBB=-5V; Tp=30|I s 1.0 1.6 |I s tf Fall time 0.15 0.3 |I s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUV42 SEM NE HAG INC OND IC TOR UC Fig.2 Outline dimensions 3 |
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